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A DLTS study of the effects of boron counterdoping on the gap states in n-type hydrogenated amorphous silicon

✍ Scribed by P. Cullen; J.P. Harbison; D.V. Lang; D. Adler

Publisher: Elsevier Science
Year: 1984
Tongue: English
Weight: 317 KB
Volume: 50
Category: Article
ISSN: 0038-1098
DOI: 10.1016/0038-1098(84)90272-2

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