Dissociation kinetics of hydrogen-passivated (100) SiSiO2 interface defects
β Scribed by J.H. Stathis
- Publisher
- Elsevier Science
- Year
- 1995
- Tongue
- English
- Weight
- 198 KB
- Volume
- 28
- Category
- Article
- ISSN
- 0167-9317
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We explore the hydrogen-related microstructures involved in hot electron defect creation at the Si(100)-SiO 2 interface of metal-oxide-semiconductor field effect transistors. With ab initio density functional calculations, the energetics and defect levels have been calculated for hydrogen in bulk si
We explore the hydrogen-related microstructures involved in hot electron defect creation at the Si(100)-SiO 2 interface of metal-oxide-semiconductor field effect transistors. Based on the energetics of hydrogen desorption from the interface between silicon and silicondioxide, we argue that the hard