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Comparative analysis of the H2 passivation of interface defects at the (100)SiSiO2 interface using electron spin resonance

✍ Scribed by A. Stesmans

Publisher: Elsevier Science
Year: 1996
Tongue: English
Weight: 620 KB
Volume: 97
Category: Article
ISSN: 0038-1098
DOI: 10.1016/0038-1098(95)00535-8

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