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Dislocation-related electron capture behaviour of traps in n-type GaN

✍ Scribed by Fang, Z-Q; Look, D C; Polenta, L

Book ID
121363962
Publisher
Institute of Physics
Year
2002
Tongue
English
Weight
304 KB
Volume
14
Category
Article
ISSN
0953-8984

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## Abstract Free energy and capture cross section of the E2 trap in n‐type GaN are investigated by deep level transient spectroscopy with the help of an experimental method, relying on space charge depth modulation [D. Pons, J. Appl. Phys. **55**, 3644 (1984)]. This technique is applied with a larg