Free energy and capture cross section of the E2 trap in n-type GaN

✍ Scribed by Pernot, J. ;Ulzhöfer, C. ;Muret, P. ;Beaumont, B. ;Gibart, P.

• Book ID: 105363061
• Publisher: John Wiley and Sons
• Year: 2005
• Tongue: English
• Weight: 208 KB
• Volume: 202
• Category: Article
• ISSN: 0031-8965
• DOI: 10.1002/pssa.200460438

✦ Synopsis

Abstract

Free energy and capture cross section of the E2 trap in n‐type GaN are investigated by deep level transient spectroscopy with the help of an experimental method, relying on space charge depth modulation [D. Pons, J. Appl. Phys. 55, 3644 (1984)]. This technique is applied with a large range of filling pulse durations (up to 6 orders of magnitude) and for temperature varying between 260 K and 330 K. Entropy and capture barrier are found to be negligible. Analysis of our results makes N in Ga site (N~Ga~ antisite) as the best candidate for this trap. (© 2005 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)