Discussion of tooling solutions for the direct bonding of silicon wafers
โ Scribed by Nick Aitken; Tony Rogers
- Publisher
- Springer-Verlag
- Year
- 2006
- Tongue
- English
- Weight
- 361 KB
- Volume
- 12
- Category
- Article
- ISSN
- 0946-7076
No coin nor oath required. For personal study only.
๐ SIMILAR VOLUMES
Using dielectric barrier discharges at atmospheric pressure, silicon wafers have been treated for lowtemperature direct wafer bonding with annealing temperatures down to 100 ยฐC. The experimental setup and the bond procedure are described and the influences of different experimental parameters, such
The properties of BESOI p-Si / SiO / p-Si and n-Si / SiO / n-Si structures manufactured by direct bonding of 2 2 pre-oxidized Czochralski p-and n-type (100) 2-40 V ? cm silicon wafers were studied. Our study shows that the transversal static I-V and quasi-static C-V characteristics as well as the h