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Hydrophilicity of Silicon Wafers for Direct Bonding

โœ Scribed by Kissinger, G. ;Kissinger, W.


Publisher
John Wiley and Sons
Year
1991
Tongue
English
Weight
373 KB
Volume
123
Category
Article
ISSN
0031-8965

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Using dielectric barrier discharges at atmospheric pressure, silicon wafers have been treated for lowtemperature direct wafer bonding with annealing temperatures down to 100 ยฐC. The experimental setup and the bond procedure are described and the influences of different experimental parameters, such