UV surface exposure for low temperature hydrophilic silicon direct bonding

Atmospheric-pressure plasma pretreatment

Atmospheric-pressure plasma pretreatment for direct bonding of silicon wafers at low temperatures

✍ M. Eichler; B. Michel; M. Thomas; M. Gabriel; C.-P. Klages 📂 Article 📅 2008 🏛 Elsevier Science 🌐 English ⚖ 631 KB

Using dielectric barrier discharges at atmospheric pressure, silicon wafers have been treated for lowtemperature direct wafer bonding with annealing temperatures down to 100 °C. The experimental setup and the bond procedure are described and the influences of different experimental parameters, such