An accurate and broadband method for heterojunction bipolar transistors (HBTs) small-signal model parameters is presented in this article. This method differs from previous ones by extracting the equivalent-circuit parameters without using a special test structure or global numerical optimization te
β¦ LIBER β¦
Direct parameter-extraction method for HBT small-signal model
β Scribed by Bousnina, S.; Mandeville, P.; Kouki, A.B.; Surridge, R.; Ghannouchi, F.M.
- Book ID
- 114554271
- Publisher
- IEEE
- Year
- 2002
- Tongue
- English
- Weight
- 192 KB
- Volume
- 50
- Category
- Article
- ISSN
- 0018-9480
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