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Small-Signal Modeling of SiGe HBTs Using Direct Parameter-Extraction Method

โœ Scribed by Han-Yu Chen; Kun-Ming Chen; Guo-Wei Huang; Chun-Yen Chang


Book ID
114618418
Publisher
IEEE
Year
2006
Tongue
English
Weight
304 KB
Volume
53
Category
Article
ISSN
0018-9383

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An accurate and broadband method for heterojunction bipolar transistors (HBTs) small-signal model parameters is presented in this article. This method differs from previous ones by extracting the equivalent-circuit parameters without using a special test structure or global numerical optimization te