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Direct observation of secondary ionization current in n-channel MOSFETs

โœ Scribed by Mihnea, A.; Rudeck, P.J.; Chun Chen; Prall, K.D.; Ghodsi, R.


Book ID
114616913
Publisher
IEEE
Year
2002
Tongue
English
Weight
379 KB
Volume
49
Category
Article
ISSN
0018-9383

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โœ A. Bravaix; D. Goguenheim; N. Revil; E. Vincent ๐Ÿ“‚ Article ๐Ÿ“… 2001 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 232 KB

The hot-carrier degradation induced by first-and second-impact ionization events is compared in advanced N-MOSFETs used for digital applications with a 3.2-nm gate-oxide thickness. Results show that the substrate enhanced electron injection (SEEI) mechanism is still increased in 0.15-mm channel leng