✦ LIBER ✦

Behavior of holes generated by impact ionization in n-channel MOSFET's

✍ Scribed by Kotani, N.; Kawazu, S.; Komori, S.

Book ID: 114594635
Publisher: IEEE
Year: 1983
Tongue: English
Weight: 327 KB
Volume: 30
Category: Article
ISSN: 0018-9383
DOI: 10.1109/t-ed.1983.21430

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

The effect of holes on the injection-ind

The effect of holes on the injection-induced breakdown in n-channel MOSFET's

✍ Kotani, N.; Kawazu, S. 📂 Article 📅 1985 🏛 IEEE 🌐 English ⚖ 454 KB

Generation of interface states by hot ho

Generation of interface states by hot hole injection in MOSFET's

✍ Gesch, H.; Leburton, J.-P.; Dorda, G.E. 📂 Article 📅 1982 🏛 IEEE 🌐 English ⚖ 634 KB

Transition Probability of Impact Ionizat

Transition Probability of Impact Ionization by Holes in Silicon

✍ D. K. Gautam; W. S. Khokle; K. B. Garg 📂 Article 📅 1988 🏛 John Wiley and Sons 🌐 English ⚖ 319 KB

Evidence of the ion's impact position ef

Evidence of the ion's impact position effect on SEB in N-channel power MOSFETs

✍ Dachs, C.; Roubaud, F.; Palau, J.-M.; Bruguier, G.; Gasiot, J.; Tastet, P. 📂 Article 📅 1994 🏛 IEEE 🌐 English ⚖ 452 KB

Hot-carrier reliability study of second

Hot-carrier reliability study of second and first impact ionization degradation in 0.15-μm channel-length N-MOSFETS

✍ A. Bravaix; D. Goguenheim; N. Revil; E. Vincent 📂 Article 📅 2001 🏛 Elsevier Science 🌐 English ⚖ 232 KB

The hot-carrier degradation induced by first-and second-impact ionization events is compared in advanced N-MOSFETs used for digital applications with a 3.2-nm gate-oxide thickness. Results show that the substrate enhanced electron injection (SEEI) mechanism is still increased in 0.15-mm channel leng

Effects of ionizing radiation on n-chann

Effects of ionizing radiation on n-channel MOSFET's fabricated in zone-melting-recrystallized Si films on SiO2

✍ B. Tsaur; J. Fan; G. Turner; D. Silversmith 📂 Article 📅 1982 🏛 IEEE 🌐 English ⚖ 329 KB