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Evidence of the ion's impact position effect on SEB in N-channel power MOSFETs

✍ Scribed by Dachs, C.; Roubaud, F.; Palau, J.-M.; Bruguier, G.; Gasiot, J.; Tastet, P.

Book ID
125885809
Publisher
IEEE
Year
1994
Tongue
English
Weight
452 KB
Volume
41
Category
Article
ISSN
0018-9499

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## Abstract We experimentally assess the impact of the transient effect in the bit error rate of a 30 km 10 Γ— 10 Gb/s DWDM transmission system with hybrid amplification.For that purpose, the analyzed hybrid system is composed by a counter‐pumped Raman fiber amplifier followed by an Erbium doped fib