Effect of 50 and 80 MeV phosphorous ions on the contribution of interface and oxide state density in n-channel MOSFETs

✍ Scribed by N.S Shinde; S.D Dhole; D Kanjilal; V.N Bhoraskar

• Book ID: 114171340
• Publisher: Elsevier Science
• Year: 1999
• Tongue: English
• Weight: 109 KB
• Volume: 156
• Category: Article
• ISSN: 0168-583X
• DOI: 10.1016/s0168-583x(99)00278-5