## Abstract A simple and efficient method to extract model parameters of a small‐signal MOSFET equivalent circuit, including substrate resistance and capacitance, is proposed. Unlike previous methods, substrate parameters, resistances, and inductances are directly determined without any curve‐fitti
Direct extraction of equivalent circuit parameters for balun on silicon substrate
✍ Scribed by Yong Zhong Xiong; Teo, T.H.; Fu, J.S.
- Book ID
- 114617896
- Publisher
- IEEE
- Year
- 2005
- Tongue
- English
- Weight
- 241 KB
- Volume
- 52
- Category
- Article
- ISSN
- 0018-9383
No coin nor oath required. For personal study only.
📜 SIMILAR VOLUMES
## Abstract © 2004 Wiley Periodicals, Inc. Microwave Opt Technol Lett 43: 268, 2004; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.20440
## Abstract © 2004 Wiley Periodicals, Inc. Microwave Opt Technol Lett 43: 269, 2004; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.20441
## Abstract On‐wafer parameter extraction in thin‐film bulk acoustic wave resonator (FBAR) embedded on its substrate is performed. The extraction algorithm implements a multistep least‐squares optimization strategy, obtaining the equivalent‐circuit parameters of both FBAR and its substrate from exp