We demonstrated a Kerr-lens self-mode-locked Yb:(Lu0.5Y0.5)2SiO5 (Yb:LYSO) laser for the first time, which was independent of active or passive modulators as well as hard diaphragm inside cavity. An output power of 3.08 W with a repetition rate of 99 MHz was obtained using a pump power of 16.48 W. T
Diode pumped and mode-locked Yb:GdYAG ceramic lasers
โ Scribed by D.W. Luo; C.W. Xu; J. Zhang; X.P. Qin; H. Yang; W.D. Tan; Z.H. Cong; D.Y. Tang
- Publisher
- John Wiley and Sons
- Year
- 2011
- Tongue
- English
- Weight
- 93 KB
- Volume
- 8
- Category
- Article
- ISSN
- 1612-2011
No coin nor oath required. For personal study only.
โฆ Synopsis
We have successfully fabricated a new type of ytterbium-doped yttrium gadolinium aluminum garnet (Yb:GdYAG) laser ceramic using the solid-state reactive sintering method under vacuum condition. Continuous wave (CW) laser operation of the 5.0 at.% Yb:GdYAG ceramic laser has achieved 4.27 W output power with 26.7% slope efficiency. Passive mode-locking properties of the ceramic was also firstly demonstrated with a semiconductor saturable absorbing mirror (SESAM). Stable mode-locked pulses with 4.4 ps pulse width and a maximum output power of 3.75 W at the wavelength of 1030.4 nm have been generated.
๐ SIMILAR VOLUMES
A diode-pumped picosecond laser was demonstrated with Yb 3+ -doped yttrium lanthanum oxide transparent laser ceramic Yb:(Y 1-x La x ) 2 O 3 (x = 0.1), which was fabricated with nanopowders and sintered in H 2 atmosphere. Passive modelocking was realized for the first time to our knowledge with a sem
The performance of passively mode-locked Nd:GYSGG lasers was investigated for the first time. The 1061.5 nm continuous wave (CW) mode-locking operation of the Nd:GYSGG crystal was achieved and pulse as short as 3.1 ps have been generated with a semiconductor saturable absorber mirror (SESAM). At the
A Nd:Gd~0.7~Y~0.3~VO~4~ crystal is grown in laser quality. The crystal is diode-pumped at 808 nm. When operated in a Z-shaped resonator with an acousto-optical modulator in combination with a Kerr lens, it produces pulses of 1.7 ps at 140 MHz repetition rate.
A diode-pumped actively Q-switched and modelocked Nd:GdVO4 laser with great average output power and high efficiency was realized by using a comparative simple configuration and a short cavity length. The laser generates stable mode-locked pulses of estimated width 240 ps lying underneath a Q-switch
Spectroscopic properties and laser output results of Pr-doped YAlO3 material under 1-W GaN-laser-diode pumping at various resonator arrangement (linear, V-folded, and microchip configuration) are reviewed and compared. Continuous output power of up to 140 mW in the near-infrared spectral range at 74