A diode pumped passively mode-locked Nd:LuVO 4 laser with a low temperature (LT) In0.25Ga0.75As absorber is realized in this paper. An In 0.25 Ga 0.75 As single-quantum-well absorber, which is grown by use of the metal-organic chemicalvapor deposition technique, acts as nonlinear absorber and output
Diode-pumped passively mode-locked Nd:GYSGG laser
โ Scribed by B.Y. Zhang; J.L. Xu; G.J. Wang; J.L. He; W.J. Wang; Q.L. Zhang; D.L. Sun; J.Q. Luo; S.T. Yin
- Publisher
- John Wiley and Sons
- Year
- 2011
- Tongue
- English
- Weight
- 95 KB
- Volume
- 8
- Category
- Article
- ISSN
- 1612-2011
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โฆ Synopsis
The performance of passively mode-locked Nd:GYSGG lasers was investigated for the first time. The 1061.5 nm continuous wave (CW) mode-locking operation of the Nd:GYSGG crystal was achieved and pulse as short as 3.1 ps have been generated with a semiconductor saturable absorber mirror (SESAM). At the pump power of 7.39 W, the maximum average output power of 1.27 W was obtained with the slope efficiency of 18.9%. The pulse repetition rate of 42 MHz was obtained.
Intensity, ร10 4 a.u.
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