Diode-end-pumped passively mode-locked Nd:LuVO4laser with a semiconductor saturable-absorber mirror
โ Scribed by H.H. Yu; H.J. Zhang; D.Y. Tang; Z.P. Wang; J.Y. Wang; Y.G. Yu; G.Q. Xie; H. Luo; M.H. Jiang
- Publisher
- Springer
- Year
- 2008
- Tongue
- English
- Weight
- 270 KB
- Volume
- 91
- Category
- Article
- ISSN
- 0721-7269
No coin nor oath required. For personal study only.
๐ SIMILAR VOLUMES
A diode pumped passively mode-locked Nd:LuVO 4 laser with a low temperature (LT) In0.25Ga0.75As absorber is realized in this paper. An In 0.25 Ga 0.75 As single-quantum-well absorber, which is grown by use of the metal-organic chemicalvapor deposition technique, acts as nonlinear absorber and output
A passively Q-switched mode-locked all-solid-state YVO~4~/Nd:YVO~4~ composite crystal laser with a low-temperature (LT)-GaAs saturable absorber mirror was realized. Q-switched mode-locking pulses laser with about 100% modulation depth was obtained at the pump power of 3 W and the mode-lock pulse tra
A diode-pumped passively mode-locked YVO 4 / Nd:YVO4 composite crystal green laser with a semiconductor saturable absorber mirror (SESAM) and a intracavity frequencydoubling KTP crystal was realized. The maximum average output power of 2.06 W at 532 nm with a repetition rate of 100 MHz was obtained