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Diffusion of impurities in undercooled melt of pulse heated ion-implanted silicon

✍ Scribed by Dvurechenskii, A. V. ;Grötzschel, R. ;Igonina, N. M. ;Koval, B. A. ;Lebbdeva, N. I.


Publisher
John Wiley and Sons
Year
1984
Tongue
English
Weight
470 KB
Volume
84
Category
Article
ISSN
0031-8965

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Boron ion implantation into pre-amorphized silicon is studied. Pre-amorphization is performed either by F + or Si + implantation prior to B + implantation at 10 keV with 3 Â 10 15 ions/cm 2 . Broadening of the boron profile can be suppressed markedly in the pre-amorphized layers. For instance, the a