The trend for decreasing geometries within CMOS architecture is driving the need for ever shallower, highly doped, low resistivity layers in silicon. The conventional dopant of choice, boron, as a result of its light mass requires that implant energies be ever reduced to meet the demands of these sh
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Differential Hall profiling of ultra-shallow junctions in Si and SOI
β Scribed by N.S. Bennett; A.J. Smith; B. Colombeau; R. Gwilliam; N.E.B. Cowern; B.J. Sealy
- Publisher
- Elsevier Science
- Year
- 2005
- Tongue
- English
- Weight
- 116 KB
- Volume
- 124-125
- Category
- Article
- ISSN
- 0921-5107
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