✦ LIBER ✦

Dielectrophoretic alignment of gallium nitride nanowires (GaN NWs) for use in device applications

✍ Scribed by Kim, T H; Lee, S Y; Cho, N K; Seong, H K; Choi, H J; Jung, S W; Lee, S K

Book ID: 120472384
Publisher: Institute of Physics
Year: 2006
Tongue: English
Weight: 1023 KB
Volume: 17
Category: Article
ISSN: 0957-4484
DOI: 10.1088/0957-4484/17/14/009

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Magnetic alignment of ZnO nanowires for

Magnetic alignment of ZnO nanowires for optoelectronic device applications

✍ Lee, Sang-Won; Jeong, Min-Chang; Myoung, Jae-Min; Chae, Gee-Sung; Chung, In-Jae 📂 Article 📅 2007 🏛 American Institute of Physics 🌐 English ⚖ 340 KB

Dielectrophoretic trapping of selenium n

Dielectrophoretic trapping of selenium nanorods for use in device applications

✍ Mahmoodi, Seyed Reza; Bayati, Marzieh; Rad, Somayeh Hosseini; Heidari, Elham Kam 📂 Article 📅 2013 🏛 Springer US 🌐 English ⚖ 480 KB

SPIE Proceedings [SPIE SPIE OPTO - San F

SPIE Proceedings [SPIE SPIE OPTO - San Francisco, California, USA (Saturday 2 February 2013)] Gallium Nitride Materials and Devices VIII - Investigation of droop-causing mechanisms in GaN-based devices using fully microscopic many-body theory

✍ Hader, J.; Moloney, J. V.; Koch, S. W.; Chyi, Jen-Inn; Nanishi, Yasushi; Morkoç, 📂 Article 📅 2013 🏛 SPIE ⚖ 898 KB

SPIE Proceedings [SPIE SPIE OPTO: Integr

SPIE Proceedings [SPIE SPIE OPTO: Integrated Optoelectronic Devices - San Jose, CA (Saturday 24 January 2009)] Gallium Nitride Materials and Devices IV - Investigation of the electrical activity of V-defects in GaN using scanning force microscopy

✍ Lochthofen, André; Mertin, Wolfgang; Bacher, Gerd; Hoeppel, Lutz; Bader, Stefan; 📂 Article 📅 2009 🏛 SPIE ⚖ 794 KB

[IEEE 2013 IEEE Energytech - Cleveland,

[IEEE 2013 IEEE Energytech - Cleveland, OH, USA (2013.05.21-2013.05.23)] 2013 IEEE Energytech - High-frequency switching limitations in Gallium Nitride (GaN) and Silicon Carbide (SiC) power devices for boost converter applications

✍ Shenai, K. 📂 Article 📅 2013 🏛 IEEE ⚖ 795 KB

Application of chemical-mechanical polis

Application of chemical-mechanical polishing for planarizing of silicon nitride passivation layers used in high power III-V laser devices

✍ Jiang Wei 📂 Article 📅 2006 🏛 John Wiley and Sons 🌐 English ⚖ 322 KB 👁 1 views

## Abstract Chemical‐mechanical polishing (CMP) allows the planarization of wafers with thin layer at its surface. Subject of this investigation was to apply CMP for planarizing silicon nitride (Si~3~N~4~) passivation layer in high power III‐V laser devices, which remained in the structure as the i