[IEEE 2013 IEEE Energytech - Cleveland, OH, USA (2013.05.21-2013.05.23)] 2013 IEEE Energytech - High-frequency switching limitations in Gallium Nitride (GaN) and Silicon Carbide (SiC) power devices for boost converter applications

✍ Scribed by Shenai, K.

• Book ID: 127056508
• Publisher: IEEE
• Year: 2013
• Weight: 795 KB
• Category: Article
• ISBN: 1467344443
• DOI: 10.1109/energytech.2013.6645319