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SPIE Proceedings [SPIE SPIE OPTO: Integrated Optoelectronic Devices - San Jose, CA (Saturday 24 January 2009)] Gallium Nitride Materials and Devices IV - Investigation of the electrical activity of V-defects in GaN using scanning force microscopy

✍ Scribed by Lochthofen, André; Mertin, Wolfgang; Bacher, Gerd; Hoeppel, Lutz; Bader, Stefan; Off, Jürgen; Hahn, Berthold; Morkoç, Hadis; Litton, Cole W.; Chyi, Jen-Inn; Nanishi, Yasushi; Piprek, Joachim; Yoon, Euijoon

Book ID: 120489906
Publisher: SPIE
Year: 2009
Weight: 794 KB
Volume: 7216
Category: Article
DOI: 10.1117/12.808992

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