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SPIE Proceedings [SPIE Integrated Optoelectronic Devices 2008 - San Jose, CA (Saturday 19 January 2008)] Gallium Nitride Materials and Devices III - Comparison of various gate dielectrics on the performance of AlGaN/GaN HFETS

✍ Scribed by Fan, Qian; Leach, Jacob H.; Wu, Mo; Xiao, Bo; Gu, Xing; Morkoç, Hadis; Handel, Peter H.; Morkoç, Hadis; Litton, Cole W.; Chyi, Jen-Inn; Nanishi, Yasushi; Yoon, Euijoon

Book ID: 120607611
Publisher: SPIE
Year: 2008
Weight: 429 KB
Volume: 6894
Category: Article
DOI: 10.1117/12.763688

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