SPIE Proceedings [SPIE Integrated Optoelectronic Devices 2008 - San Jose, CA (Saturday 19 January 2008)] Gallium Nitride Materials and Devices III - Why InGaN laser-diode degradation is accompanied by the improvement of its thermal stability

✍ Scribed by Marona, L.; Wiśniewski, P.; Leszczyński, M.; Grzegory, I.; Suski, T.; Porowski, S.; Czernecki, R.; Czerwinski, A.; Pluska, M.; Ratajczak, J.; Perlin, P.; Morkoç, Hadis; Litton, Cole W.; Chyi, Jen-Inn; Nanishi, Yasushi; Yoon, Euijoon

• Book ID: 120463626
• Publisher: SPIE
• Year: 2008
• Weight: 285 KB
• Volume: 6894
• Category: Article
• DOI: 10.1117/12.762220