A 10 mm thickness columned CaCu 3 Ti 4 O 12 ceramic was fabricated by the conventional solid-state reaction method and the dielectric properties of different parts in ceramic had been investigated. For the sample close to the surface, only one Debye-type relaxation around 10 7 Hz was observed at roo
Dielectric response of interacting oxygen defects in germanium
β Scribed by Hiroyuki Shima; Tsuneyoshi Nakayama
- Book ID
- 104556720
- Publisher
- John Wiley and Sons
- Year
- 2004
- Tongue
- English
- Weight
- 123 KB
- Volume
- 1
- Category
- Article
- ISSN
- 1862-6351
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π SIMILAR VOLUMES
Spectroscopic investigations during the last decade have resulted in a detailed picture of oxygen related defects in germanium such as oxygen interstitials and thermal donors. The results are summarized and compared with those of equivalent centres in silicon. The many similarities suggest that unif
## Abstract The behaviours of germanium doped in Czochralski (CZ) silicon have attracted considerable attention in recent years. In this article, a review concerning recent processes in the study about oxygen related defects in germaniumβdoped CZ (GCZ) silicon is presented. The formation of oxygen