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Dielectric relaxation processes in stoichiometric Ge:Sb:Te amorphous films

✍ Scribed by R. Ruiz Santos; E. Prokhorov; J. González-Hernández; G. Luna-Bárcenas; Yu. Kovalenko


Book ID
116672239
Publisher
Elsevier Science
Year
2010
Tongue
English
Weight
564 KB
Volume
356
Category
Article
ISSN
0022-3093

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The amorphous-to-crystal transition has been studied through in situ resistance measurements in Ge 2 Sb 2 Te 5 thin films doped by ion implantation with nitrogen, oxygen or fluorine at different concentrations. Enhancement of the thermal stability has been observed in O and N amorphous doped Ge 2 Sb