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The thickness dependence of the crystallization behavior in sandwiched amorphous Ge2Sb2Te5 thin films

✍ Scribed by G. Bai; R. Li; H.N. Xu; Y.D. Xia; Z.G. Liu; H.M. Lu; J. Yin

Book ID
113849600
Publisher
Elsevier Science
Year
2011
Tongue
English
Weight
244 KB
Volume
406
Category
Article
ISSN
0921-4526

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The amorphous-to-crystal transition has been studied through in situ resistance measurements in Ge 2 Sb 2 Te 5 thin films doped by ion implantation with nitrogen, oxygen or fluorine at different concentrations. Enhancement of the thermal stability has been observed in O and N amorphous doped Ge 2 Sb