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Different crystallization processes of as-deposited amorphous Ge2Sb2Te5 films on nano- and picosecond single laser pulse irradiation

✍ Scribed by Ke Zhang; Simian Li; Guangfei Liang; Huan Huang; Yang Wang; Tianshu Lai; Yiqun Wu

Book ID: 113850053
Publisher: Elsevier Science
Year: 2012
Tongue: English
Weight: 455 KB
Volume: 407
Category: Article
ISSN: 0921-4526
DOI: 10.1016/j.physb.2012.03.044

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## Abstract Four Ge~2~Sb~2~Te~5~ thin films were prepared by pulsed laser deposition (PLD) at 58, 100, 140, and 190 mJ/pulse laser energy, respectively. The influence of laser energy on the crystallization of Ge~2~Sb~2~Te~5~ was investigated. The result shows that laser energy has evident effect on