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Dielectric properties of rf sputtered Ta 2 O 5 on rapid thermally nitrided Si

โœ Scribed by Novkovski, N; Paskaleva, A; Atanassova, E


Book ID
121474031
Publisher
Institute of Physics
Year
2005
Tongue
English
Weight
161 KB
Volume
20
Category
Article
ISSN
0268-1242

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Interface and oxide properties of rf spu
โœ T Dimitrova; E Atanassova ๐Ÿ“‚ Article ๐Ÿ“… 1998 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 201 KB

Interface and oxide properties of Ta 2 O 5 -Si structures with rf sputtered Ta 2 O 5 of 7-80 nm thickness have been investigated using capacitors on p-Si and transistor-like test structures. It is found tha the electrical properties of the films are dominated by an extremely thin SiO 2 layer which i