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Dielectric properties of Ta2O5films grown on silicon substrates plasma nitrided in N2O

✍ Scribed by N. Novkovski; E. Atanassova

Publisher
Springer
Year
2005
Tongue
English
Weight
785 KB
Volume
81
Category
Article
ISSN
1432-0630

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## Abstract Wear‐out and breakdown at constant current stress (__J__ = 10 mA/cm^2^) were studied for Ta~2~O~5~ insulating layers (30 nm thick) thermally grown over plasma oxynitrided (5 to 15 s at room temperature) Si substrates. For injected charges __Q__~inj~ lower than 100 C/cm^2^ hard breakdown