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Dielectric properties of AlN thin films formed by ion beam enhanced deposition

✍ Scribed by Z.R. Song; Y.H. Yu; D.S. Shen; S.C. Zou; Z.H. Zheng; E.Z. Luo; Z. Xie

Book ID
117357831
Publisher
Elsevier Science
Year
2003
Tongue
English
Weight
165 KB
Volume
57
Category
Article
ISSN
0167-577X

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Synthesis of gradient thin films by ion
Synthesis of gradient thin films by ion beam enhanced deposition
✍ Liu Xianghuai; Zhou Jiankun; Zou Shichang; S. Taniguchi; A. SchrΓΆer; G.K. Wolf πŸ“‚ Article πŸ“… 1991 πŸ› Elsevier Science 🌐 English βš– 286 KB

Gradient thin films consisting of Si3N 4 were prepared on metals (nickel, steel, AI-C fibre, Ni3AI etc.) by ion-beam-enhanced deposition. The coating deposited on one side of the sample has a high resistance (10 s f2) while that on the other side has a low resistance (1 g2) with a gradual change in