✦ LIBER ✦

Device characterization of L-type MOS transistors

✍ Scribed by C.H. Han

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Extraction of lateral device parameters

✍ Jongoh Kim; Byounguk Ihn; Bumman Kim; Kwangil Lee; Wonoh Lee; Seounghwan Lee 📂 Article 📅 1996 🏛 Elsevier Science 🌐 English ⚖ 395 KB

Changes of mobility along a depletion ty

✍ A. Bar-Lev; S. Margalit 📂 Article 📅 1970 🏛 Elsevier Science 🌐 English ⚖ 460 KB

Electrical characterization versus tempe

✍ A. Emrani; G. Ghibaudo; F. Balestra; B. Piot; V. Thirion; A. Straboni 📂 Article 📅 1993 🏛 Elsevier Science 🌐 English ⚖ 281 KB

Development and performance characteriza

✍ P.N. Andhare; R.K. Nahar; N.M. Devashrayee; S. Chandra; W.S. Khokle 📂 Article 📅 1990 🏛 Elsevier Science 🌐 English ⚖ 709 KB

A model for the breakdown characteristic

✍ H. Maes; P. Six; W. Sansen 📂 Article 📅 1981 🏛 Elsevier Science 🌐 English ⚖ 921 KB

Measurements on depletion-mode field eff

✍ A.M. Mohsen; F.J. Morris 📂 Article 📅 1975 🏛 Elsevier Science 🌐 English ⚖ 979 KB