✦ LIBER ✦
Extraction of lateral device parameters and channel doping profile of vertical double-diffused MOS transistors
✍ Scribed by Jongoh Kim; Byounguk Ihn; Bumman Kim; Kwangil Lee; Wonoh Lee; Seounghwan Lee
- Publisher
- Elsevier Science
- Year
- 1996
- Tongue
- English
- Weight
- 395 KB
- Volume
- 39
- Category
- Article
- ISSN
- 0038-1101
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