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Development of high-current 4H-SiC ACCUFET

✍ Scribed by Singh, R.; Capell, D.C.; Das, M.K.; Lipkin, L.A.; Palmour, J.W.

No coin nor oath required. For personal study only.

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Excess leakage currents in high-voltage

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Subnanosecond 4H-SiC diode current break

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