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High-temperature operation of SiC planar ACCUFET

✍ Scribed by Chilukuri, R.K.; Shenoy, P.M.; Baliga, B.J.

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

[IEEE Conference Record of 1998 IEEE Ind

✍ Chilukuri, R.K.; Shenoy, P.M.; Jayant Baliga, B. 📂 Article 📅 1998 🏛 IEEE 🌐 English ⚖ 460 KB

Development of high-current 4H-SiC ACCUF

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✍ Ruby N. Ghosh; Peter Tobias 📂 Article 📅 2005 🏛 Springer US 🌐 English ⚖ 122 KB

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✍ Puqi Ning; Lei, T.G.; Fei Wang; Guo-Quan Lu; Ngo, K.D.T.; Rajashekara, K. 📂 Article 📅 2010 🏛 IEEE 🌐 English ⚖ 709 KB

Hydrogen sensing characteristics of Pd-S

✍ C. K. Kim; J. H. Lee; Y. H. Lee; N. I. Cho; D. J. Kim; W. P. Kang 📂 Article 📅 1999 🏛 Springer US 🌐 English ⚖ 128 KB

High-temperature properties of SiC/SiC f

✍ R.H. Jones; C.H. Henager Jr. 📂 Article 📅 1994 🏛 Elsevier Science 🌐 English ⚖ 548 KB