✦ LIBER ✦

Subnanosecond 4H-SiC diode current breakers

✍ Scribed by P. A. Ivanov; I. V. Grekhov

Book ID: 114992396
Publisher: Springer
Year: 2012
Tongue: English
Weight: 194 KB
Volume: 46
Category: Article
ISSN: 1063-7826
DOI: 10.1134/s1063782612040100

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Leakage currents in 4H-SiC JBS diodes

✍ P. A. Ivanov; I. V. Grekhov; A. S. Potapov; O. I. Kon’kov; N. D. Il’inskaya; T. 📂 Article 📅 2012 🏛 Springer 🌐 English ⚖ 301 KB

Leakage current in Ti/4H-SiC Schottky ba

Leakage current in Ti/4H-SiC Schottky barrier diode

✍ K. Ohtsuka; Y. Matsuno; K. Kuroda; H. Sugimoto; Y. Tarui; M. Imaizumi; T. Takami 📂 Article 📅 2006 🏛 Elsevier Science 🌐 English ⚖ 143 KB

Excess leakage currents in high-voltage

Excess leakage currents in high-voltage 4H-SiC Schottky diodes

✍ P. A. Ivanov; I. V. Grekhov; A. S. Potapov; T. P. Samsonova; N. D. Il’inskaya; O 📂 Article 📅 2010 🏛 Springer 🌐 English ⚖ 175 KB

Minority carrier injection limited curre

Minority carrier injection limited current in Re/4H-SiC Schottky diodes

✍ Sarpatwari, K. ;Mohney, S. E. ;Ashok, S. ;Awadelkarim, O. O. 📂 Article 📅 2010 🏛 John Wiley and Sons 🌐 English ⚖ 245 KB

## Abstract Current–voltage–temperature, capacitance–voltage, and Fourier transform‐deep level transient spectroscopy (FT‐DLTS) measurements have been employed to gain insights into the conduction mechanism in Re/4H n‐silicon carbide (SiC) Schottky diodes. A power law dependence of current on volta

Planar defects in 4H-SiC PiN diodes

✍ M. E. Twigg; R. E. Stahlbush; K. G. Irvine; J. J. Sumakeris; T. P. Chow; P. A. L 📂 Article 📅 2005 🏛 Springer US 🌐 English ⚖ 388 KB

Report on 4H–SiC JTE Schottky diodes

✍ L. Chen; O.J. Guy; D. Doneddu; S.G.J. Batcup; S.P. Wilks; P.A. Mawby; T. Bouchet 📂 Article 📅 2006 🏛 Elsevier Science 🌐 English ⚖ 273 KB