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Determining noise parameters of MESFET's solely from their S parameters

✍ Scribed by Chunqing, Cai ;Shuzhen, Cai

Book ID
105041837
Publisher
Springer
Year
1990
Tongue
English
Weight
530 KB
Volume
11
Category
Article
ISSN
0195-9271

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GaAs MESFET rf I-V curve through unique
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## Abstract A method to uniquely determine each small signal circuit element from measured S parameters is used to obtain the rf I‐V curve for uniform‐doped MESFETs. No dc measurement is needed in this method. The resulting rf I‐V curve differs from the static dc I‐V curve and is useful to predict