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Design of GaAs MESFET Oscillator Using Large-Signal S-Parameters

✍ Scribed by Mitsui, Y.; Nakatani, M.; Mitsui, S.

Book ID
114656877
Publisher
IEEE
Year
1977
Tongue
English
Weight
347 KB
Volume
25
Category
Article
ISSN
0018-9480

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GaAs MESFET rf I-V curve through unique
GaAs MESFET rf I-V curve through unique determination of small-signal circuit parameters from measured S parameters
✍ C. C. Meng; G. H. Huang πŸ“‚ Article πŸ“… 2002 πŸ› John Wiley and Sons 🌐 English βš– 187 KB

## Abstract A method to uniquely determine each small signal circuit element from measured S parameters is used to obtain the rf I‐V curve for uniform‐doped MESFETs. No dc measurement is needed in this method. The resulting rf I‐V curve differs from the static dc I‐V curve and is useful to predict