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Determination of the valence band offset of Si/Si0.7Ge0.3/Si quantum wells using deep level transient spectroscopy

✍ Scribed by Vescan, L.; Apetz, R.; Lüth, H.


Book ID
121758693
Publisher
American Institute of Physics
Year
1993
Tongue
English
Weight
590 KB
Volume
73
Category
Article
ISSN
0021-8979

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Determination of the valence band offset
✍ Eisenhardt, Anja ;Knübel, Andreas ;Schmidt, Ralf ;Himmerlich, Marcel ;Wagner, Jo 📂 Article 📅 2010 🏛 John Wiley and Sons 🌐 English ⚖ 335 KB

## Abstract The valence band offset (VBO) at a InN/In~0.3~Ga~0.7~N(0001) as well as HfO~2~/InN(0001) heterojunction is investigated by X‐ray photoelectron spectroscopy using monochromated AlKα radiation. The InN and In~0.3~Ga~0.7~N films were grown using plasma‐assisted molecular beam epitaxy, wher