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Determination of the doping profile of a thyristor from C-V measurements†

✍ Scribed by BAKOWSKI, M.; BOLANDER, G.; AKESSON, C.


Book ID
126597193
Publisher
Taylor and Francis Group
Year
1973
Tongue
English
Weight
294 KB
Volume
35
Category
Article
ISSN
0020-7217

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Accurate determination of doping profile
✍ S. Gupta 📂 Article 📅 1988 🏛 Elsevier Science 🌐 English ⚖ 158 KB

A novel method of accurately determining the doping profile under the gate regioq of an enhancement mode MOSFET using d.c. measurements has been proposed-:. This method computes point-to-point impurity concentration in the gate region by utilising the h, -V=, data of the MOSFET operating in its line