Determination of the charge carrier concentration and mobility in n-gap by Raman spectroscopy
β Scribed by G. Irmer; V. V. Toporov; B. H. Bairamov; J. Monecke
- Publisher
- John Wiley and Sons
- Year
- 1983
- Tongue
- English
- Weight
- 445 KB
- Volume
- 119
- Category
- Article
- ISSN
- 0370-1972
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π SIMILAR VOLUMES
We demonstrate the use of Reflectance Anisotropy Spectroscopy (RAS) to determine the carrier concentration in GaAs of the topmost layers (%20 nm) in-situ during layer growth. The doping contributes to three features in the RAS spectra: an oscillation at 0 and an offset of the baseline of the whole
Photoluminescence (PL) and electroluminescence (EL) spectra in the n-GaPjredox electrolyte system were measured at different excitation levels. The EL spectra showed a considerable blue shift with increasing the concentration of the hole injecting redox system [SO;', G?+, Fe(CN)z-1. A similar effect