Investigation of the charge carrier concentration in highly aluminum doped SiC using Raman scattering

✍ Scribed by R. Müller; U. Künecke; A. Thuaire; M. Mermoux; M. Pons; P. Wellmann

• Publisher: John Wiley and Sons
• Year: 2006
• Tongue: English
• Weight: 148 KB
• Volume: 3
• Category: Article
• ISSN: 1862-6351
• DOI: 10.1002/pssc.200564148