Determination of doping profiles on bevelled GaAs structures by Raman spectroscopy
β Scribed by R Srnanek; R Kinder; B Sciana; D Radziewicz; D.S McPhail; S.D Littlewood; I Novotny
- Book ID
- 108417448
- Publisher
- Elsevier Science
- Year
- 2001
- Tongue
- English
- Weight
- 135 KB
- Volume
- 177
- Category
- Article
- ISSN
- 0169-4332
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π SIMILAR VOLUMES
The generation and properties of photoexcited steady-state plasma of electrons and holes in bevel-shaped p-type GaAs structures were studied by micro-Raman spectroscopy. The best correspondence of theoretical calculations with experimental spectra was obtained by using of photoexcited carrier concen
Micro-Raman spectroscopy was used to characterize beveled Zn delta (d)-doped GaAs structures. By adapting procedures previously developed for the study of Si d-doped GaAs structures, Zn-doping profiles were obtained for a set of structures prepared with different doping levels. Values of the doping
## Abstract An empirical correlation is developed for relating the wavenumbers of (Wο£ΏO) stretching modes to Wο£ΏO bond lengths and bond strengths for tungsten oxide reference compounds. A leastβsquares exponential fit of crystallographically determined Wο£ΏO bond lengths to the wavenumbers of their Ram