Application of micro-Raman spectroscopy for the evaluation of doping profile in Zn δ-doped GaAs structures

✍ Scribed by R. Srnanek; G. Irmer; D. Donoval; J. Osvald; D. Mc Phail; A. Christoffi; B. Sciana; D. Radziewicz; M. Tlaczala

• Publisher: Elsevier Science
• Year: 2008
• Tongue: English
• Weight: 414 KB
• Volume: 39
• Category: Article
• ISSN: 0026-2692
• DOI: 10.1016/j.mejo.2008.06.039

✦ Synopsis

Micro-Raman spectroscopy was used to characterize beveled Zn delta (d)-doped GaAs structures. By adapting procedures previously developed for the study of Si d-doped GaAs structures, Zn-doping profiles were obtained for a set of structures prepared with different doping levels. Values of the doping spike concentration and the full-width at half-maximum of the doping profile were compared with the values obtained by the electrochemical capacitance-voltage (EC-V) and secondary ion mass spectroscopy (SIMS) methods. The good correspondence between this Raman procedure and other well-known methods proves the validity of the technique for determining doping profiles in Zn d-doped GaAs structures.