In this paper, we describe the physical properties and electrical characteristics of thin Sm 2 O 3 dielectric films deposited on Si (100) by means of rf reactive sputtering. The structural and morphological features of these films were studied, as a function of the growth conditions (three various a
Detailed investigation of the effects of La and Al content on the electrical characteristics and reliability properties of La–Al–O gate dielectrics
✍ Scribed by Masamichi Suzuki; Masato Koyama; Atsuhiro Kinoshita
- Publisher
- Elsevier Science
- Year
- 2010
- Tongue
- English
- Weight
- 527 KB
- Volume
- 50
- Category
- Article
- ISSN
- 0026-2714
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