Crystallization and silicon diffusion nanoscale effects on the electrical properties of Al2O3 based devices

✍ Scribed by M. Lanza; M. Porti; M. Nafria; X. Aymerich; G. Benstetter; E. Lodermeier; H. Ranzinger; G. Jaschke; S. Teichert; L. Wilde; P. Michalowski

• Publisher: Elsevier Science
• Year: 2009
• Tongue: English
• Weight: 646 KB
• Volume: 86
• Category: Article
• ISSN: 0167-9317
• DOI: 10.1016/j.mee.2009.03.020

✦ Synopsis

In this work, Atomic Force Microscopy (AFM) based techniques are used to study, at the nanoscale, the dependence of the electrical properties of Al 2 O 3 stacks for Flash memories on the percent of diffused Silicon and material crystallization after being annealed at different temperatures.