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Design rules for field plate edge termination in SiC Schottky diodes

โœ Scribed by Tarplee, M.C.; Madangarli, V.P.; Quinchun Zhang; Sudarshan, T.S.


Book ID
114538944
Publisher
IEEE
Year
2001
Tongue
English
Weight
165 KB
Volume
48
Category
Article
ISSN
0018-9383

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In this paper, we report the breakdown voltage (BV) of AlGaN/GaN based Schottky diodes with field plate edge termination. Simulation and fabrication of AlGaN/GaN Schottky diodes were carried out. The simulations were performed using the commercial 2-D device simulator DESSIS. From the simulations, i