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Design of edge termination for GaN power Schottky diodes

✍ Scribed by J. R. Laroche; F. Ren; K. W. Baik; S. J. Pearton; B. S. Shelton; B. Peres

Book ID
107453405
Publisher
Springer US
Year
2005
Tongue
English
Weight
373 KB
Volume
34
Category
Article
ISSN
0361-5235

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✍ K. Remashan; Wen-Pin Huang; Jen-Inn Chyi πŸ“‚ Article πŸ“… 2007 πŸ› Elsevier Science 🌐 English βš– 303 KB

In this paper, we report the breakdown voltage (BV) of AlGaN/GaN based Schottky diodes with field plate edge termination. Simulation and fabrication of AlGaN/GaN Schottky diodes were carried out. The simulations were performed using the commercial 2-D device simulator DESSIS. From the simulations, i