Optimization of electrode shape for high power GaN-based light-emitting diodes
β Scribed by Yu-pei Fan; Li-wen Cheng; Yue-ming Lin; Jun-bing Zhang; Xiang-hua Zeng
- Book ID
- 107509668
- Publisher
- Tianjin University of Technology
- Year
- 2009
- Tongue
- English
- Weight
- 241 KB
- Volume
- 5
- Category
- Article
- ISSN
- 1673-1905
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We have investigated the annealing-induced improved electrical properties of In(10 nm)/ ITO(200 nm) contacts with p-type GaN. The contacts become ohmic with a specific contact resistance of 2.75 Γ 10 -3 O cm 2 upon annealing at 650